Invidious

MIT 6.774 Physics of Microfabrication: Front End Processing, Fall 2004

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Instructor: Judy Hoyt * NOTE: Lectures 1 and 2 are not available. * View the complete course: ocw.mit.edu/courses/6-774-physics-of-microfabricat… This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe). License: Creative Commons BY-NC-SA More information at ocw.mit.edu/terms More courses at ocw.mit.edu Support OCW at ow.ly/a1If50zVRlQ We encourage constructive comments and discussion on OCW’s YouTube and other social media channels. Personal attacks, hate speech, trolling, and inappropriate comments are not allowed and may be removed. More details at ocw.mit.edu/comments.

1:00:36

3. Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)

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1:11:30

4. Wafer Cleaning and Gettering (cont.)

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1:16:00

5. Wafer Cleaning and Gettering - Contamination Measurement Techniques

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1:13:37

6. Oxidation and the Si/SiO2 Interface. Deal/Grove Model, Thin Oxide Models

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1:11:08

7. Oxidation and the Si/SiO2 Interface. 2D Effects, Doping Effects, Point Defect

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1:02:52

8. Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic

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1:00:43

9. Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects

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1:18:39

10. Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion

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1:16:02

11. Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques

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1:16:38

12. Ion Implantation and Annealing - Analytic Models and Monte Carlo

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1:11:49

13. Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED

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1:16:51

14. Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction

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1:00:00

15. Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail

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1:14:08

16. The SUPREM IV Process Simulator

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1:10:00

17. Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth

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1:12:27

18. Thin Film Deposition and Epitaxy - CVD Examples and PVD

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1:12:15

19. Thin Film Deposition and Epitaxy - Modeling Topography of Deposition

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1:14:36

20. Etching - Introduction

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1:12:08

21. Etching - Poly Gate Etching, Stringers, Modeling of Etching

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1:18:49

22. Silicides, Device Contacts, Novel Gate Materials

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1:12:44

23. Growth and Processing of Strained Si/SiGe and Stress Effects on Devices

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